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www.irf.com 1 01/13/12 AUIRF7478Q hexfet power mosfet top view 8 1 2 3 4 5 6 7 d d d d g s a s s a automotive grade specifically designed for automotive applications, this cellular design of hexfet? power mosfets utilizes the latest processing techniques to achieve low on- resistance per silicon area. this benefit combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in automotive and a wide variety of other applications. description features advanced planar technology low on-resistance dynamic dv/dt rating 150c operating temperature fast switching fully avalanche rated repetitive avalanche allowed up to tjmax lead-free, rohs compliant automotive qualified * absolute maximum ratings stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. the thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. ambient temperature (t a ) is 25c, unless otherwise specified. hexfet ? is a registered trademark of international rectifier. * qualification standards can be found at http://www.irf.com/ gds gate drain source so-8 v (br)dss 60v r ds(on) typ. 20m max. 26m i d 7.0a parameter max. units v ds drain-source voltage 60 v i d @ t a = 25c continuous drain current, v gs @ 10v 7.0 i d @ t a = 70c continuous drain current, v gs @ 10v 5.6 i dm pulsed drain current 56 p d @t a = 25c power dissipation 2.5 linear derating factor 0.02 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy 140 mj i ar avalanche current 4.2 a dv/dt peak diode recovery dv/dt 3.7 v/ns t j operating junction and t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case) thermal resistance parameter max. units r 0 50 c/w c w a -55 to + 150 pd- 96423a
AUIRF7478Q 2 www.irf.com s d g repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 16mh r g = 25 , i as = 4.2a. pulse width 400 s; duty cycle 2%. when mounted on 1 inch square copper board c oss eff. is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss i sd 4.2a, di/dt 160a/ s, v dd v (br)dss , t j 150c static electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units v (br)dss drain-to-source breakdown voltage 60 ??? ??? v () . 0.0 0 0 () 1.0 .0 1 0 100 100 100 dynamic electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units q g total gate charge ??? 21 31 q gs gate-to-source charge ??? 4.3 ??? q gd gate-to-drain ("miller") charge ??? 9.6 ??? t d(on) turn-on delay time ??? 7.7 ??? t r rise time ??? 2.6 ??? t d(off) turn-off delay time ??? 44 ??? t f fall time ??? 13 ??? c iss input capacitance ??? 1740 ??? c oss output capacitance ??? 300 ??? c rss reverse transfer capacitance ??? 37 ??? c oss output capacitance ??? 1590 ??? c oss output capacitance ??? 220 ??? c oss output capacitance ??? 410 ??? diode characteristics parameter min. typ. max. units i s continuous source current (body diode) i sm pulsed source current (body diode) v sd diode forward voltage ??? ??? 1.3 v t rr reverse recovery time ??? 52 78 ns t j = 25c,i f = 4.2a q rr reverse recovery charge ??? 100 150 nc di/dt = 100a/ s na a v ds = v gs , i d = 250 a r ds(on) static drain-to-source on-resistance m v gs = 4.5v, i d = 3.5a conditions v ds = 50v, i d = 4.2a i d = 4.2a v gs = -20v v gs = 20v v ds = 48v, v gs = 0v v ds = 48v, v gs = 0v, t j = 125c conditions v gs = 0v, i d = 250 a reference to 25c, i d = 1ma v gs = 10v, i d = 4.2a t j = 25c, i s = 4.2a, v gs = 0v integral reverse p-n junction diode. ? = 1.0mhz v gs = 0v, v ds = 1.0v, f =1.0mhz v gs = 0v, v ds = 48v, f =1.0mhz conditions mosfet symbol ns nc i d = 4.2a r g = 6.2 . . 0 0 0 v gs = 10v v dd = 30v a pf 56 ??? ??? ??? ???
AUIRF7478Q www.irf.com 3 ? qualification standards can be found at international rectifier?s web site: http//www.irf.com/ ?? exceptions (if any) to aec-q101 requirements are noted in the qualification report. ??? highest passing voltage qualification information ? so-8 msl1 rohs compliant yes esd machine model class m3(+/- 300v ) ??? (per aec-q101-002) human body model class h1c(+/- 2000v ) ??? (per aec-q101-001) qualification level automotive (per aec-q101) ?? comments: this part number(s) passed automotive qualification. ir?s industrial and consumer qualification level is granted by extension of the higher automotive level. charged device model class c5(+/- 2000v ) ??? (per aec-q101-005) moisture sensitivity level
AUIRF7478Q 4 www.irf.com fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 1 10 100 0.1 1 10 100 20 s pulse width t = 25 c j top bottom vgs 15v 10v 4.5v 3.7v 3.5v 3.3v 3.0v 2.7v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 2.7v 1 10 100 0.1 1 10 100 20 s pulse width t = 150 c j top bottom vgs 15v 10v 4.5v 3.7v 3.5v 3.3v 3.0v 2.7v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 2.7v fig 4. normalized on-resistance vs. temperature -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 7.0a 2.5 3.0 3.5 4.0 v gs , gate-to-source voltage (v) 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( ) t j = 25c t j = 150c v ds = 25v 20 s pulse width
AUIRF7478Q www.irf.com 5 fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage 0 10 20 30 40 0 2 4 6 8 10 q , total gate charge (nc) v , gate-to-source voltage (v) g gs i = d 4.2a v = 12v ds v = 30v ds v = 48v ds fig 7. typical source-drain diode forward voltage 0.1 1 10 100 0.2 0.6 1.0 1.4 1.8 2.2 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 0.1 1 10 100 1000 1 10 100 1000 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j a v , drain-to-source voltage (v) i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms fig 8. maximum safe operating area 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd
AUIRF7478Q 6 www.irf.com fig 11. maximum effective transient thermal impedance, junction-to-ambient 0.01 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms fig 9. maximum drain current vs. ambient temperature 25 50 75 100 125 150 0.0 2.0 4.0 6.0 8.0 t , case temperature ( c) i , drain current (a) c d
1 0.1 %
+ -
AUIRF7478Q www.irf.com 7 fig 13. on-resistance vs. gate voltage fig 12. on-resistance vs. drain current fig 14a&b. basic gate charge test circuit and waveform fig 15a&b. unclamped inductive test circuit and waveforms fig 15c. maximum avalanche energy vs. drain current d.u.t. v ds i d i g 3ma v gs .3 f 50k .2 f 12v current regulator same type as d.u.t. current sampling resistors + - q g q gs q gd v g charge t p v (br)dss i as r g i as 0.01 t p d.u.t l v ds + - v dd driver a 15v 20v 25 50 75 100 125 150 0 100 200 300 400 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 1.9a 3.4a 4.2a 0 102030405060 i d , drain current (a) 0.016 0.018 0.020 0.022 0.024 0.026 0.028 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ) v gs = 10v v gs = 4.5v 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 v gs, gate -to -source voltage (v) 0.01 0.02 0.03 0.04 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ) i d = 7.0a
AUIRF7478Q 8 www.irf.com so-8 package outline dimensions are shown in millimeters (inches) so-8 part marking e1 d e y b a a1 h k l .189 .1497 0 .013 .050 bas ic .0532 .0040 .2284 .0099 .016 .1968 .1574 8 .020 .0688 .0098 .2440 .0196 .050 4.80 3.80 0.33 1.35 0.10 5.80 0.25 0.40 0 1.27 bas ic 5.00 4.00 0.51 1.75 0.25 6.20 0.50 1.27 mi n max millimeters inches mi n max dim 8 e c .0075 .0098 0.19 0.25 .025 basic 0.635 basic 87 5 65 d b e a e 6x h 0.25 [.010] a 6 7 k x 45 8x l 8x c y 0.25 [.010] c a b e1 a a1 8x b c 0.10 [.004] 4 3 12 f oot p r i nt 8x 0.72 [.028] 6.46 [.255] 3x 1.27 [.050] 4. ou t l i ne conf or ms t o j e de c ou t l i ne ms - 012 aa. not e s : 1. dimens ioning & tolerancing per asme y14.5m-1994. 2. cont rol l ing dime ns ion: mil l ime t e r 3. dime ns ions are s hown in mil l ime t e rs [inche s ]. 5 dime ns ion doe s not incl u de mol d pr ot ru s ions . 6 dime ns ion doe s not incl u de mol d pr ot ru s ions . mold protrus ions not to exceed 0.25 [.010]. 7 dimens ion is t he lengt h of lead for soldering to a s ubst rat e. mold protrus ions not to exceed 0.15 [.006]. 8x 1.78 [.070] note: for the most current drawing please refer to ir website at http://www.irf.com/package/
AUIRF7478Q www.irf.com 9 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters(inches). 3. outline conforms to eia-481 & eia-541. so-8 tape and reel dimensions are shown in millimeters (inches)
AUIRF7478Q 10 www.irf.com ordering information base part package type standard pack complete part number form quantity AUIRF7478Q so-8 tube 95 AUIRF7478Q tape and reel 4000 AUIRF7478Qtr
AUIRF7478Q www.irf.com 11 important notice unless specifically designated for the automotive market, international rectifier corporation and its subsidiaries (ir) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its prod- ucts and services at any time and to discontinue any product or services without notice. part numbers designated with the ?au? prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. all products are sold subject to ir?s terms and conditions of sale supplied at the time of order acknowledgment. ir warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with ir?s standard warranty. testing and other quality control techniques are used to the extent ir deems necessary to support this warranty. except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. ir assumes no liability for applications assistance or customer product design. customers are responsible for their products and applications using ir components. to minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards. reproduction of ir information in ir data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. reproduction of this informa- tion with alterations is an unfair and deceptive business practice. ir is not responsible or liable for such altered documentation. information of third parties may be subject to additional restrictions. resale of ir products or serviced with statements different from or beyond the parameters stated by ir for that product or service voids all express and any implied warranties for the associated ir product or service and is an unfair and deceptive business practice. ir is not responsible or liable for any such statements. ir products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or in any other application in which the failure of the ir product could create a situation where personal injury or death may occur. should buyer purchase or use ir products for any such unintended or unauthorized application, buyer shall indemnify and hold international recti- fier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ir was negligent regarding the design or manufacture of the product. only products certified as military grade by the defense logistics agency (dla) of the us department of defense, are designed and manufactured to meet dla military specifications required by certain military, aerospace or other applications. buyers acknowledge and agree that any use of ir products not certified by dla as military-grade, in applications requiring military grade products, is solely at the buyer?s own risk and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use. ir products are neither designed nor intended for use in automotive applications or environments unless the specific ir products are designated by ir as compliant with iso/ts 16949 requirements and bear a part number including the designation ?au?. buyers acknowledge and agree that, if they use any non-designated products in automotive applications, ir will not be responsible for any failure to meet such requirements. for technical support, please contact ir?s technical assistance center http://www.irf.com/technical-info/ world headquarters: 101 n. sepulveda blvd., el segundo, california 90245 tel: (310) 252-7105

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